Abstracto

Transport mechanisms governed by length scales on both sides of the Metal-Insulator Transition in n-type InP

A El kaaouachi, H El idrissi, M Errai1, A Echchelh, S Dlimi, Chi Te Liang

We have studied the transport properties in n-type InP semiconductor. We show that the behavior of the electrical conductivity as a function of temperature on both sides of the metal-insulator transition is governed by the competition among different length scale such as the localization length, the correlation length, the interaction length and the hopping length. We also show that several physical characteristic parameters of this InP sample follow the scaling laws at various magnetic fields.